High-Sensitivity Planar Si-Based MSM Photodetector with Very Thin Amorphous Silicon-Alloy Quantum-Well-Like Barrier Layers
碩士 === 國立中央大學 === 電機工程研究所 === 91 === Abstract The planar Si-based metal-semiconductor-metal photodetectors (MSM-PDs) with a-Si:H/a-SiC:H (or a-Si:H/a-SiGe:H) multi-layers to reduce device dark current had been studied. For the ones with a-Si:H/a-SiC:H multi-layers, their sensitivity could b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96627656920503519878 |