study of high speed and low power SiGe pMOSFET
碩士 === 國立中央大學 === 電機工程研究所 === 91 === Study of high speed and low power SiGe pMOSFET Abstract We have demonstrated a high performance Si1-xGex pMOSFET technology for low power and low noise circuit applications. The incorporation of 30% Ge in the strained Si1-xGex channel provides a drive current...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18095534341513162137 |