Investigation of InGaP/GaAs δ-doping Camel-Gate Field-Effect Transistors
碩士 === 國立高雄師範大學 === 物理學系 === 91 === In this article, a new δ-doping field-effect transistor utilizing an InGaP/GaAs camel-gate structure was fabricated and demonstrated. In this device, a low doped GaAs layer together with an n+-GaAs and an ultra-thin p+-InGaP layers form a high-barrier c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19403957016661292797 |