PECVD Oxide with Low Nitrogen Content for High Performance Waveguie Devices
碩士 === 國立中山大學 === 光電工程研究所 === 91 === Silicon oxynitride (SiON) films for applications of optical waveguide devices deposited using plasma-enhanced chemical vapor deposition were investigated. The SiON films were deposited on 4” silicon wafers based on the reaction of N2O/SiH4 precursors. The refract...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72285600240861153036 |