PECVD Oxide with Low Nitrogen Content for High Performance Waveguie Devices

• Main Authors: Li-Feng Tseng, 曾立豐
• Other Authors: Ann-Kuo Chu
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/72285600240861153036

碩士 === 國立中山大學 === 光電工程研究所 === 91 === Silicon oxynitride (SiON) films for applications of optical waveguide devices deposited using plasma-enhanced chemical vapor deposition were investigated. The SiON films were deposited on 4” silicon wafers based on the reaction of N2O/SiH4 precursors. The refractive indices of the films were adjusted by varying the partial pressure of SiH4 in the precursors. In addition, films prepared at conventional flow (~1500 sccm) and low flow (~1000 sccm) conditions were compared. We found that the nitrogen content of the films grown at low flow conditions can be significantly reduced resulting in a reduction of absorption around 1500 nm. Therefore SiON films grown at low flow conditions would be more suitable for optical waveguide fabrication. Finally, with the aid of the beam propagation method (BPM) software, a single-mode optical waveguide based on the proposed technology was designed and fabricated. The propagation loss was 0.79dB/cm for TE polarization, and 0.73db/cm for T