Electroreflectance of surface-intrinsic-n+ type doped GaAs by using a large modulating field
碩士 === 國立中山大學 === 物理學系研究所 === 91 === It is known that electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. However each peak still contains t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02533046385883096407 |