Synchronous/Asynchronous 4-T SRAM Using Dual Threshold Voltage

碩士 === 國立中山大學 === 電機工程學系研究所 === 91 === 英文提要: Two different topics associated with their respective applications are proposed in this thesis. The first topic is focused on the implementation of a 4-Kb 500MHz 4-T CMOS SRAM using low-Vthn bitline drivers and high-Vthp latches. The storage of data is r...

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Bibliographic Details
Main Authors: Hon-Yuan Leo, 梁漢源
Other Authors: Chua-Chin Wang
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/10081186264260574324