The character of δ-doping in InGaP/InGaAsN/GaAs HBT wafer by photo-reflectance technique
碩士 === 國立清華大學 === 材料科學工程學系 === 91 === We use the photo-reflectance (PR) technique to measurements InGaP/InGaAsN/GaAs heterojunction bipolar transistor (HBT) wafer , we fine the change of photo-reflectance spectrum when there is a high concentration δ-dopin...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45726352686249273044 |