nvestigation of High Quality GaN on Si (111) Substrate by Using Nitride Buffer Layer
碩士 === 國立清華大學 === 材料科學工程學系 === 91 === Abstract III-V nitride has attracted much attention in the late 20th century because of its many merits such as tunable direct band gap which cover the lasing wavelength from 300nm to 800nm, highly reliable device property in harsh environm...
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| Format: | Others |
| Language: | zh-TW |
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2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41383913371137131095 |