Characterization and Fabrication of LPD-oxide GaAs MOS
碩士 === 國立清華大學 === 電子工程研究所 === 91 === Ⅲ-Ⅴ semiconductors have higher carrier mobility and better luminous characteristic compared with Ⅳ semiconductors, so it suits the application of high speed device and luminescent device. But it has been limited by the characteristic of its oxide, and...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36735704953445254251 |