Study of the low temperature LPCVD diffusion barrier TaN film
碩士 === 國立清華大學 === 電子工程研究所 === 91 === We developed a low-pressure chemical vapor deposition (LPCVD) TaNx system and deposited TaNx films as diffusion barriers, the films were grown at the temperature of 400~450℃ using tantalum pentabromine (TaBr5), ammonia (NH3) as co-reactants, and argon...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02364424743876256893 |