The fabrication of Cu nanowire
碩士 === 國立清華大學 === 電子工程研究所 === 91 === We developed the electrochemical displacement method for Cu nanowire formed by replacing the silicon and the amorphous-silicon on SiO2/Si structure with electron beam lithography. The various line width from 0.1μm to 0.2μm were patterned by e-beam resi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45817584357578501894 |