Tunneling Magnetoresistance on Synthetic Antiferromagnetic Layers
碩士 === 國立臺灣大學 === 物理學研究所 === 91 === Tunneling magnetoresistance (TMR) is due to the different tunneling rate of electrons with different spin between magnetic multilayer. In this thesis, we attach synthetic antiferromagnetic (SAF) layer to the pseudo-spin valve (PSV) magnetic tunneling ju...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98094813211630950290 |