Growth-Then-Anodization Technique and Stress Effect of Rapid Thermal Ultra-Thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === We introduce an alternative oxidation process called growth-then-anodization technique of rapid thermal ultra-thin gate oxide to reduce the gate leakage current. The growth models for DC anodization of silicon are introduced. The anodization technique...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66216204496377674679 |