Nano-structure Studies on Silicon-doped InGaN/GaN Quantum Wells
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === In this research, we study the microstructures of Si-doped InGaN/GaN multiple quantum wells (MQWs) with various doping conditions, including un-doped, well-doped, and barrier-doped conditions. In all the samples, the MQW geometries are the same. Also, the Si dop...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07144763904386556335 |