The Fabrication of Poly-Si Thin FilmTransistor by ELA with Absorption Layer
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === Polycrystalline silicon has been prepared by KrF excimer laser annealing (ELA) of dehydrogenated amorphous silicon film. In order to increase the grain size and improve the device performance, SiNx was used as absorption layer underneath the amorphous silicon fi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78772544331746676156 |