Physics and applications of novel Si-based materials and devices
博士 === 國立臺灣大學 === 電機工程學研究所 === 91 === Novel Si-based materials (Si1-xCx, Si1-xGex, and Si1-x-yGex Cy alloys) and devices (Metal-oxide-semiconductor (MOS) tunneling diode and SiGe heterojunction bipolar transistor (HBT)) have the advantages of low cost and feasible manufacturing ability. Therefore, i...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70912956703292065530 |