InAsN Alloys Grown by Radio-Frequency Plasma Assisted Gas-Source Molecular Beam Epitaxy and Its Application on Middle-Infrared Laser Diodes
博士 === 國立臺灣大學 === 電機工程學研究所 === 91 === In this dissertation, the growth, characterization and device application of InAsN alloys including relaxed InAsN bulk materials and InAsN/In0.53Ga0.47As strained quantum-well structures are presented. The alloys were grown on (100) InP substrates by gas-source...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15627864486597063985 |