Study Of Gate Electrode With Adjustable Work Function On High-K Dielectric For Nanometer IC Technology
碩士 === 國立臺灣科技大學 === 電子工程系 === 91 === As CMOS devices are scaled beyond the 100-nm node, stringent performance targets will require the integration of metal gate electrode as well as high-k gate dielectrics. The conventional poly-Si gate technology is limited by the well-known gate depleti...
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10229864452577277294 |