| Summary: | 碩士 === 國立臺灣科技大學 === 機械工程系 === 91 === This study is primarily aimed at slurry flow between surface of wafer and pad in CMP system. It is necessary to consider the influence in hydrodynamic effect and boundary lubrication effect during polishing and find out several important characteristic, angular velocity, back pressure from carrier, number of slurry particle, size of slurry particle, elasticity of pad. It is analyzing the removal rate in the surface of wafer and the influence to flatness.
The finite difference method is used to be solved Reynolds equation and to find the pressure distribution in the surface of wafer and thickness of slurry film. Then, use modified equation to find the thickness of slurry film in steady state, removal model of single particle and motion track equation to find removal rate distribution in the surface of wafer. By using computer calculation, the result of modeling and analyzing show that there are hydrodynamic area and boundary lubrication area in the CMP removal model. The removal rate will rise in boundary lubrication area and flatness is poor; it will fall in hydrodynamic area, but flatness is better.
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