The Simulation and Analysis of High Electron Mobility Transistors Based on Compound Semiconductor Materials
碩士 === 中國文化大學 === 材料科學與製造研究所 === 91 === With the increasing requirement in the applications of microwave and millimeter wave, it is crucial to develop novel semiconductor devices which can be operated under high-frequency. Due to the physical properties of silicon, the silicon-based semic...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00981887612119852264 |