The effects of in-situ annealing and postannealing on the physical properties of tantalum oxide thin film by reactive radio-frequency sputtering
碩士 === 南台科技大學 === 電機工程系 === 91 === In this research, TaOx thin films were deposited onto (100) p+-Si wafers by radio frequency magnetron sputtering. We changed deposition power and oxygen mixture ratio to find out the optimum sputtering conditions at ambient temperature. After that, the in-situ anne...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38468130708779872031 |