High Gate Leakage Current Characterization and Analysis of Ultra-thin Gate Oxide Nano MOS Device.
碩士 === 國立臺北科技大學 === 自動化科技研究所 === 91 === Owing to the device’s shrinking down to nano scale, semiconductor MOS device is now getting into the deep sub-micron regime. As the roadmaps’ expectancy of many related powerful authorities in this semiconductor technology field, the channel length...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81277873797449488530 |