Analysis and Design of a Semiconductor Electro-Thermal Microactuator

• Main Authors: Chi-Kang Chan, 詹至剛
• Other Authors: Chin-Hsiang Cheng
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/65554319786246195638

碩士 === 大同大學 === 機械工程研究所 === 91 === This thesis aim at semiconductor electro-thermal microactuator for analysis and design. The electro-thermal microactuator discussed in the article is composed of a semiconductor substrate, a flexible area which can deform as the difference of the temperature transferred from the electric current, and a thermal insulation placed between the semiconductor substrate and the flexible area. The main character of the flexible area is a thin-film structure, and it consists of silicon substrate and aluminum. Otherwise, N-type silicon layer is made of thermal diffusion or ion implant as the heater. The research reveals the relationship of the driving voltage, displacement and temperature of the flexible area, and the implant concentration of the N-type silicon layer. It can overcome the disadvantage of the common microactuator which is high electric current consumption, and it applies an easy fabricated process and a low electric power loss device. The research has established the electric, thermal, and structural coupled-field analysis mode of the microactuator. The geometry is designed by the CAD drawing software, then simulate the structural stress and strain, electric, and thermal field by the finite element analysis software- ANSYS, in order to develop the microactuator with high electro-thermal actuated efficiency.