| Summary: | 碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === The semiconductor fabricating technologies will be promoted to nanometer scale, such as Gbit-scaled DRAMs, in the near future. The high-k thin films will be applied as dielectrics of MIM capacitors. We have studies of BaSrTiO3 for MIM structures. In this study, the main investigations will be focused on MIM capacitors by using BST thin films, as dielectics. These high dielectrics thin films will be grown by using RF magnetic controlled sputtering system with functions of heated-substrate and re-sputtering. The electrical and physical properties of the deposited Barium Strontium Titanate thin films were investigated.
In this study, the application of Al/BST/Pt/Ti/SiO2/Si for Metal-Insulator- Metal (MIM) capacitors were investigated. After the XRD measured, addition of temperature to the BST films enhance crystallization and exhibits a polycrystalline structure.
To base on C-V and I-V measurement, when as-deposition BST films were treated with pre-oxygen plasma for 15 minutes, it’s relative dielectric constant was obtained about 149. It was also found that the leakage current densities were measured about 2.49×10-9 A/cm2 at positive applied voltages of 1.5 V. When as-deposition BST films were treated with post-oxygen plasma for 20 minutes, it’s relative dielectric constant was obtained about 178. It was also found that the leakage current densities were measured about 2.22×10-9 A/cm2 at positive applied voltages of 1.5 V. When as-deposition BST films were treated with pre-oxygen plasma for 5 minutes and post-oxygen plasma for 15 minutes, it’s relative dielectric constant was obtained about 185. It was also found that the leakage current densities were measured about 8.96×10-9 A/cm2 and 3.03×10-8 A/cm2 at positive and negative applied voltages of 1.5 V, respectively.
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