Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiN...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18086239576193242755 |