Study of (TiO2)0.08- (Ta2O5)0.92 Gate Dielectric by RF Sputter
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiN...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/18086239576193242755 |
| Summary: | 碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === (Ta2O5)0.92-(TiO2)0.08 thin films with a thickness of 550 Å were deposited on p-Si (100) substrate by RF sputtering at 400℃. Before deposited (Ta2O5)0.92-(TiO2)0.08 thin films, the native oxide on Si substrate removed by Ar plasma treatment. Si3N4 and SiNO very thin layers will be grown by using N2-plasma to bombard heated Si-substrate or sputtering system with Si3N4 target. The Si3N4 and SINO layers might be as barrier to forbid out-diffusion of oxygen and silicon atoms to promote the MIS performance.
To compare among these samples, the dielectric for a film after Ar plasma treatment 5 minutes , N2 plasma treatment 10 minutes and furnace annealed at 650℃ increased to 68 and its leakage current density lowered to 3.03 × 10-9 A/cm2 at 1.5V. The dominant leakage mechanisms are the Schottky Emission at low electric field and the Poole-Frenkel at high electric field.
|
|---|