Photo-CVD SiO2 Layers on AlGaN and AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor (MOSHFET)
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所碩士班 === 91 === High quality SiO2 is successfully deposited onto AlGaN by photo chemical vapor deposition (photo-CVD) using a D2 lamp as the excitation source. We are verified the high quality SiO2 film by the analysis of the chemical and physical characteristics such as...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87764962774265421974 |