The Process Development of Tantalum Nitride on Resistor and Metal Gate Electrode
碩士 === 長庚大學 === 電子工程研究所 === 92 === Controlling the deviation of the work function is another important issue. Traditionally, the deviation sources consist of the gate oxide thickness deviation, channel length deviation, and a metal gate introduces an additional deviation source. The work...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32641628718733205811 |