Investigation of InAs/GaAs quantum dot heterostructure strain property with polarization-dependent photoluminescence
碩士 === 長庚大學 === 電子工程研究所 === 92 === The most popular epitaxial technique of creating quantum-dot heterostructure nowadays is utilizing the strain stored in the interface of two lattice-mismatched materials to form self-assembled quantum dots. Thus it is thought that the strain will be an i...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/58226036176025066603 |