The study on EGFET of tin oxide
碩士 === 長庚大學 === 電子工程研究所 === 92 === More recently the Ion Sensitive Field Effect Transistor (ISFET) has been studied extensively because of some advantages over ISE (ion sensitive electrode). Its advantage included small size, rapid response. In this study, we used EGFET to be t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57230235409457192384 |