NBTI-like Hot-Carrier Effect of SOI pMOSFET's with 1.3nm Gate Oxide
碩士 === 長庚大學 === 電子工程研究所 === 92 === SOI MOSFET effectively improves the performance of devices and the issues in conventional MOSFET. It’s will be the mainstream in IC industry. As the devices scaling down, a lot of problems will follow. The reliability of gate oxide is one of the importan...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03688699843345364587 |