Characteristic Study of MIS Capacitors Using Sputtered High-K Film as Gate Dielectrics
碩士 === 中原大學 === 電子工程研究所 === 92 === The dimension of electronic devices has shrunk continuously. To avoid short channel effects, the scaling rate of oxide thickness has already reached physical limit faster than experts predicted. In 70nm technology node, gate oxide thickness is merely in the range o...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/822z5f |