The activation technology of P-GaN
碩士 === 大葉大學 === 電機工程學系碩士班 === 92 === Present , the activation technology of P-GaN is process by conventional furnace annealing in 700~900oC , but the high temperature process will harm the device . In this thesis , the PECVD system is applied to activate the P-GaN . At the same time , th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35932209215319893493 |