Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System
碩士 === 逢甲大學 === 化學工程學所 === 92 === The SiGeC thin films were grown on a blank p-type silicon (100 wafer by the inductive-coupled plasma chemical vapor deposition system for the work .Trimethylsilane (3MS) and methane were used respectively, with dilute hydrogen as the carbon source. Parameter studied...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62059426107816526019 |