| Summary: | 碩士 === 逢甲大學 === 化學工程學所 === 92 === The SiGeC thin films were grown on a blank p-type silicon (100 wafer by the inductive-coupled plasma chemical vapor deposition system for the work .Trimethylsilane (3MS) and methane were used respectively, with dilute hydrogen as the carbon source. Parameter studied included ICP-power, growth temperature, process pressure, Si/Ge ratio, flow rate of hydrogen, and precursor flux. The characteristics of SiGeC thin film was investigated by using n&k analyzer, FTIR, AFM, ESCA and Four-point probe.
The results show that more carbon content in SiGeC thin film was obtained by using 3MS as the precursor than that by using methane as the carbon source. The maximum carbon content was obtained under the condition of 800W ICP power, 400oC, using 3MS as the carbon source. After ion implantation of boron and annealing at 550oC for an hour, the sheet resistance of carbon-containing SiGeC film is lower than that of carbo-free SiGe film. Furthermore, it was found that the higher the carbon content in SiGeC film; the lower the sheet resistance.
|
|---|
