Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System
碩士 === 逢甲大學 === 化學工程學所 === 92 === The SiGeC thin films were grown on a blank p-type silicon (100 wafer by the inductive-coupled plasma chemical vapor deposition system for the work .Trimethylsilane (3MS) and methane were used respectively, with dilute hydrogen as the carbon source. Parameter studied...
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ndltd-TW-092FCU050630352015-10-13T13:01:03Z http://ndltd.ncl.edu.tw/handle/62059426107816526019 Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System 以感應式耦合電漿化學氣相沉積系統成長矽鍺碳薄膜 Yao-kuan Wang 王耀寬 碩士 逢甲大學 化學工程學所 92 The SiGeC thin films were grown on a blank p-type silicon (100 wafer by the inductive-coupled plasma chemical vapor deposition system for the work .Trimethylsilane (3MS) and methane were used respectively, with dilute hydrogen as the carbon source. Parameter studied included ICP-power, growth temperature, process pressure, Si/Ge ratio, flow rate of hydrogen, and precursor flux. The characteristics of SiGeC thin film was investigated by using n&k analyzer, FTIR, AFM, ESCA and Four-point probe. The results show that more carbon content in SiGeC thin film was obtained by using 3MS as the precursor than that by using methane as the carbon source. The maximum carbon content was obtained under the condition of 800W ICP power, 400oC, using 3MS as the carbon source. After ion implantation of boron and annealing at 550oC for an hour, the sheet resistance of carbon-containing SiGeC film is lower than that of carbo-free SiGe film. Furthermore, it was found that the higher the carbon content in SiGeC film; the lower the sheet resistance. none 許健興 2004 學位論文 ; thesis 121 zh-TW |
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碩士 === 逢甲大學 === 化學工程學所 === 92 === The SiGeC thin films were grown on a blank p-type silicon (100 wafer by the inductive-coupled plasma chemical vapor deposition system for the work .Trimethylsilane (3MS) and methane were used respectively, with dilute hydrogen as the carbon source. Parameter studied included ICP-power, growth temperature, process pressure, Si/Ge ratio, flow rate of hydrogen, and precursor flux. The characteristics of SiGeC thin film was investigated by using n&k analyzer, FTIR, AFM, ESCA and Four-point probe.
The results show that more carbon content in SiGeC thin film was obtained by using 3MS as the precursor than that by using methane as the carbon source. The maximum carbon content was obtained under the condition of 800W ICP power, 400oC, using 3MS as the carbon source. After ion implantation of boron and annealing at 550oC for an hour, the sheet resistance of carbon-containing SiGeC film is lower than that of carbo-free SiGe film. Furthermore, it was found that the higher the carbon content in SiGeC film; the lower the sheet resistance.
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none Yao-kuan Wang 王耀寬 |
author |
Yao-kuan Wang 王耀寬 |
spellingShingle |
Yao-kuan Wang 王耀寬 Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
author_sort |
Yao-kuan Wang |
title |
Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
title_short |
Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
title_full |
Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
title_fullStr |
Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
title_full_unstemmed |
Growth of SiGeC Thin Film by Inductive Couple Plasma Chemical Vapor Deposition System |
title_sort |
growth of sigec thin film by inductive couple plasma chemical vapor deposition system |
publishDate |
2004 |
url |
http://ndltd.ncl.edu.tw/handle/62059426107816526019 |
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