The Study of the Doped-Channel FETs with Ohmic Recessed Technology
碩士 === 逢甲大學 === 電子工程所 === 92 === Pseudomorphic High electron mobility transistors(PHEMTs) have demonstrated an excellent characteristics for achieving high-frequency and high-power performance. However¸ the structures of conventional PHEMTs are not optimized for high-power application. One of the ma...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93858476126310173568 |