Nano-scale doping of SnO2 thin film gas sensor prepared by sputtering method

• Main Authors: C.M. Tsai, 蔡志明
• Other Authors: T.R. Ling
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/42183177930523954812

碩士 === 義守大學 === 材料科學與工程學系 === 92 === In this research, SnO2 thin film was prepared by using sputtering technique as gas sensor for monitoring concentration of gases such as: alcohol vapor, H2, CO, NO2 etc. Some parameters of the deposition process were studied including partial pressure, sputtering power, substrate temperature, deposition thickness, and operating temperature. Then, it was taken an insight into the particle size and morphology of deposition thin film related to their sensitivities. The result reveal that the plasma particles commonly with the higher thermal or migration energy can aggregate into larger particle after they were deposited on the substrate, then it may bring about lower sensitivity of the deposition film. A frozen deposition method was employed to decrease the substrate temperature; it can rapidly decrease the energy of deposited particle to obtain a nano-scale porous film that has the higher sensitivity for gas sensing. In additional, doping SiO2, CaO, and Pt on SnO2 was carried out by co-deposition method. For monitoring alcohol, SiO2 doping cannot increase the sensitivity but increase the stability in long-term test. Gas sensing mechanism of the deposition film was also discussed in the study.