Fabrication of Patterned Sapphire Substrates by High-Density-Plasma Etching
碩士 === 國立中興大學 === 材料工程學研究所 === 92 === III-nitride compound semiconductors are recognized to be the key materials for optoelectronic devices, such as short-wavelength light-emitting diodes (LEDs) and laser diodes. In the conventional epitaxial process for GaN LEDs, threading dislocations a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20540110453550035296 |