Scanning capacitance spectroscopy and its application on the characterization of iron-contamination-induced interface defects
碩士 === 國立中興大學 === 電機工程學系 === 92 === Scanning capacitance microscopy (SCM) has been widely employed to measure the distribution of two-dimensional (2D) carrier concentration and has been a powerful tool for nano-characterization. However, SCM cannot provide the complete information on ele...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26529482170488559127 |