Research in electrical characteristic of double barrier structure device under current-induce joule heating
碩士 === 國立中興大學 === 電機工程學系 === 92 === The Negative Differential Resistance (NDR) effects of a-Si/SiO2 double barrier structure devices are not easy to be observed at room temperature. However, we find the I-V curve of NDR-like effect and the change on the surface of the metal electrode under the stres...
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| Format: | Others |
| Language: | zh-TW |
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2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28714581218166995747 |