Synthesis and Characterization of Chemical Amplified Negative Tone Photoresist

碩士 === 國立成功大學 === 化學工程學系碩博士班 === 92 ===   Alicyclic monomeric 7-oxa-bicyclo[2,2,1]hept-5-ene-2exo,3exo- dicarboxlic acid anhydride (OBCA) was synthesized through Dield-Alder reaction. Chiral (-)-bornyl methacrylate ((-)-BMA) was prepared from dehydrating esterification of (-)-borneol and methacryl...

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Bibliographic Details
Main Authors: Shou-Mau Hong, 洪壽懋
Other Authors: Jui-Hsiang Liu
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/n5t2e7
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Summary:碩士 === 國立成功大學 === 化學工程學系碩博士班 === 92 ===   Alicyclic monomeric 7-oxa-bicyclo[2,2,1]hept-5-ene-2exo,3exo- dicarboxlic acid anhydride (OBCA) was synthesized through Dield-Alder reaction. Chiral (-)-bornyl methacrylate ((-)-BMA) was prepared from dehydrating esterification of (-)-borneol and methacrylic acid (MAA). Both acrylic monomers were then copolymerized with maleic anhydride (MA), and methyl methacrylate (MMA). The copolymers were used to prepared negative tone photoresist with PAG. Polymer pendent carboxylic groups were crosslinked through photoacid catalytic reactions. To improve the photo-crosslinking efficiency of the negative tone photoresist, 7-oxa- bicyclo[2,2,1]hept-5-ene-2,3-dicarboxlic acid mono-(2-hydroxy ethyl)ester (OBME) was synthesized and copolymerized with other comonomers. Synthesized alicyclic monomers were all confirmed using FTIR, EA and 1H-NMR. The �釽ax of the alicyclic copolymers is around 220~300 nm. The copolymers can be applied on the field of g-line (436nm), i-line (365nm), and ArF (193nm) photoresists. Thermal properties and solubility in various alkaline aqueous solutions of the photoresists were all evaluated. The photosensitive and exposure characteristics of the photoresists prepared in this investigation were all estimated. The optimal sensitivity of 27mJ/cm2 and resolution of 0.5um was achieved. The stability and the reliability of the photoresist with copolymers synthesized in this investigation were all confirmed. Dry etching resistance of the prepared copolymers were compared with those of polystyrene and PMMA, Alicyclic aliphatic polymers prepared in this investigation were found to obviously improve the plasma etching resistance.