Preparation of Zr-N Thin Film and Its Characteristics as Gate Electrode
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 92 === In this investigation, thin films of ZrNx were prepared by reactive RF magnetron sputtering from a Zr target in an Ar+N2 atmosphere, and the experiment was divided into four sections. In the first section, the material characteristics of ZrNx thin films d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73614174996375228597 |