Study of GaAs-Based Heterojunction Bipolar Transistors (HBTs)
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In the first part of this thesis, the changed performances between the InGaP/GaAs heterojunction bipolar transistors (HBTs) with- and without- sulfur treatment are detailed investigated. For meet the best completeness, the factor of temperature are also in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72871805305485577286 |