MOVPE Growth of (In)GaNAs and GaInNP for Quantum Well Lasers and Heterojunction Bipolar Transistors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this dissertation, the III-N-V alloys and their heterostructures including GaNAs, InGaNAs, GaInNP, GaNAs/GaAs and InGaNAs/GaAs quantum wells have been grown by metal organic vapor phase epitaxy (MOVPE). Several material characterization techniques, such...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/95911527501031982551 |