The characteristics of n-channel lateral diffused metal-oxide-semiconductor (LDMOS) field effect transistors with different gate oxide thickness
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, the characteristics of Lateral Diffused Metal-Oxide-Semi- conductor (LDMOS) field effect transistors based on 1.0μm technology with different gate oxide thickness are investigated. The characteristics of LDMOS transistors with different g...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85234330301321003481 |