Fabrication and Study ofInGaP/InGaAsN/GaAs Double HeterojunctionBipolar Transistors with Low Turn-OnVoltage
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === With the massive development of wireless communication, microwave devices play a vital role, and the heterojunction bipolar transistors are the essential devices for the microwave circuits. Based on the excellent bandgap structure and the characteristi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09705902336773127398 |