Investigation of Transient Effect in Carbon-doped HBTs and Fabrication of Transient-free Oxide-confined Collector-up HBTs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === Due to the rapid growth of the wireless communication markets, GaAs-based heterojunction bipolar transistors (HBTs) are getting more and more attractive. Carbon-doped InGaP/GaAs HBTs are reported to have a superior thermal stability and a high reliabil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62677836385375908131 |