Investigation and Fabrication of AlGaN/GaN and GaN/InGaN HFETs by Metalorganic Vapor Phase Epitaxy system
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, we first compare two different type ohmic contact metals on AlGaN/GaN heterostructure field effect transistors (HFETs) structure grown by metalorganic vapor phase epitaxy (MOVPE) system, and then discuss the device electrical characteristics...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82795760655079615795 |